类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 最大输出电流 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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TC6320TG-G | Microchip Technology | 数据表 | 6600 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 84.99187mg | SILICON | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | DUAL | 鸥翼 | 260 | 40 | TC6320 | 2 | 增强型MOSFET | 10 ns | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | N-CHANNEL AND P-CHANNEL | 15 ns | -2A | 2V | 7Ohm | 200V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.65mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
FDS9926A | ON Semiconductor | 数据表 | 9985 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Tin (Sn) | 20V | 2W | 鸥翼 | 6.5A | Dual | 增强型MOSFET | 2W | 8 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 650pF @ 10V | 9nC @ 4.5V | 9ns | 4 ns | 6.5A | 1V | 10V | 0.03Ohm | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
FDS6890A | ON Semiconductor | 数据表 | 15000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 65 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 180mOhm | 快速切换 | 20V | 2W | 鸥翼 | 7.5A | Dual | 增强型MOSFET | 2W | 13 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 18m Ω @ 7.5A, 4.5V | 1.5V @ 250μA | 2130pF @ 10V | 32nC @ 4.5V | 26ns | 23 ns | 7.5A | 800mV | 8V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
NTZD3155CT1G | ON Semiconductor | 数据表 | 51359 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 540mA 430mA | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500mOhm | 250mW | FLAT | 260 | 540mA | 40 | NTZD3155C | 6 | Dual | 增强型MOSFET | 250mW | 10 ns | N and P-Channel | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | 2.5nC @ 4.5V | 12ns | 20V | N-CHANNEL AND P-CHANNEL | 12 ns | 540mA | 1V | 6V | 0.54A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | DMN65D8LDW-7 | Diodes Incorporated | 数据表 | 220 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | 12 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 6Ohm | HIGH RELIABILITY | 300mW | 鸥翼 | 260 | 40 | DMN65D8LDW | 6 | 增强型MOSFET | 300mW | 3.3 ns | 2 N-Channel (Dual) | SWITCHING | 6 Ω @ 115mA, 10V | 2V @ 250μA | 22pF @ 25V | 0.87nC @ 10V | 3.2ns | 60V | 6.3 ns | 180mA | 20V | 0.15A | 60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
FDS6990AS | ON Semiconductor | 数据表 | 15000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 7.5A | 24 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench®, SyncFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 22mOhm | Tin (Sn) | 900mW | 鸥翼 | 260 | 30 | 不合格 | 2 | Dual | 增强型MOSFET | 2W | 8 ns | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 7.5A, 10V | 3V @ 1mA | 550pF @ 15V | 14nC @ 5V | 8ns | 8 ns | 7.5mA | 1.7V | 20V | 7.5A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.7 V | 1.75mm | 5mm | 4mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
NTMD6P02R2G | ON Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 29 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 4.8A | 85 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 33mOhm | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | -20V | 750mW | 鸥翼 | 260 | -6A | 40 | NTMD6P02 | 8 | 1 | 6A | Dual | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 33m Ω @ 6.2A, 4.5V | 1.2V @ 250μA | 1700pF @ 16V | 35nC @ 4.5V | 20ns | 20V | 50 ns | 7.8A | -880mV | 12V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 450 pF | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
NDS9945 | ON Semiconductor | 数据表 | 494220 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 100mOhm | Tin (Sn) | 60V | 1.6W | 鸥翼 | 3.5A | Dual | 增强型MOSFET | 1.6W | 5 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 345pF @ 25V | 30nC @ 10V | 7.5ns | 7 ns | 3.5A | 1.7V | 20V | 60V | 10A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.7 V | 1.57mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | BSC150N03LDGATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 26 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | OptiMOS™ | e3 | no | 活跃 | 1 (Unlimited) | 6 | EAR99 | 逻辑电平兼容 | FLAT | not_compliant | BSC150N03 | 8 | R-PDSO-F6 | 不合格 | 增强型MOSFET | 26W | DRAIN | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 20A, 10V | 2.2V @ 250μA | 无卤素 | 1100pF @ 15V | 13.2nC @ 10V | 2.2ns | 8A | 20V | 30V | 10 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N04S4L11ATMA1 | Infineon Technologies | 数据表 | 12760 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 25 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 41W | FLAT | 未说明 | not_compliant | 未说明 | R-PDSO-F6 | 增强型MOSFET | 41W | 5 ns | 2 N-Channel (Dual) | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 无卤素 | 1990pF @ 25V | 26nC @ 10V | 2ns | 15 ns | 20A | 16V | 40V | 0.0116Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6306P | ON Semiconductor | 数据表 | 22409 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | -20V | 300mW | 鸥翼 | -600mA | Dual | 增强型MOSFET | 300mW | 5.5 ns | 2 P-Channel (Dual) | SWITCHING | 420m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 114pF @ 10V | 2nC @ 4.5V | 14ns | 20V | 14 ns | 600mA | -1.2V | 12V | -20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
FDS4897C | ON Semiconductor | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.2A 4.4A | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29MOhm | 900mW | DUAL | 鸥翼 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 6.2A, 10V | 3V @ 250μA | 760pF @ 20V | 20nC @ 10V | 15ns | N-CHANNEL AND P-CHANNEL | 18 ns | 4.4A | 1.9V | 20V | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N10S4L22ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | 30 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 60W | 未说明 | not_compliant | 未说明 | 60W | 5 ns | 2 N-Channel (Dual) | 22m Ω @ 17A, 10V | 2.1V @ 25μA | 无卤素 | 1755pF @ 25V | 27nC @ 10V | 3ns | 18 ns | 20A | 16V | 100V | 100V | 175°C | 逻辑电平门 | 1mm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
FDMA1032CZ | ON Semiconductor | 数据表 | 40308 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 3.7A 3.1A | 2 | 37 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 68mOhm | ESD PROTECTION | 20V | 1.4W | 3.7A | 2 | Dual | 增强型MOSFET | 1.4W | DRAIN | 700mW | N and P-Channel | SWITCHING | 68m Ω @ 3.7A, 4.5V | 1.5V @ 250μA | 340pF @ 10V | 6nC @ 4.5V | 11ns | N-CHANNEL AND P-CHANNEL | 11 ns | 3.7A | 1V | 12V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1 V | 850μm | 2mm | 2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
FDC6401N | ON Semiconductor | 数据表 | 56090 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 70MOhm | 20V | 960mW | 鸥翼 | 3A | 2 | Dual | 增强型MOSFET | 960mW | 5 ns | 700mW | 2 N-Channel (Dual) | SWITCHING | 70m Ω @ 3A, 4.5V | 1.5V @ 250μA | 324pF @ 10V | 4.6nC @ 4.5V | 7ns | 1.6 ns | 3A | 900mV | 12V | 3A | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 900 mV | 1.1mm | 3mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
FDS8958B | ON Semiconductor | 数据表 | 43770 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6.4A 4.5A | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 26MOhm | Tin (Sn) | 900mW | DUAL | 鸥翼 | 增强型MOSFET | 1.6W | N and P-Channel | SWITCHING | 26m Ω @ 6.4A, 10V | 3V @ 250μA | 540pF @ 15V | 12nC @ 10V | 6ns | N-CHANNEL AND P-CHANNEL | 6 ns | 4.5A | 2V | 25V | 6.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.575mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
FDPC8011S | ON Semiconductor | 数据表 | 213 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8 | 192mg | 2 | 38 ns | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 150°C | -55°C | 900mW | Dual | 增强型MOSFET | 2W | SWITCHING | 5ns | 25V | N-CHANNEL | 4 ns | 27A | 1.4V | 12V | 13A | 25V | 1.24nF | METAL-OXIDE SEMICONDUCTOR | 1.2mOhm | 6 mΩ | 1.4 V | 800μm | 3.4mm | 3.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6320C | ON Semiconductor | 数据表 | 360000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 220mA 140mA | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 4Ohm | 逻辑电平兼容 | 300mW | 鸥翼 | 220mA | Dual | 增强型MOSFET | 300mW | 5 ns | N and P-Channel | SWITCHING | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 8ns | N-CHANNEL AND P-CHANNEL | 8 ns | 220mA | 850mV | 8V | 25V | 25V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.1mm | 2mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
FDS3890 | ON Semiconductor | 数据表 | 75 In Stock | - | 最小起订量: 1 最小包装量: 1 | 21 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 26 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 44MOhm | TIN | 80V | 2W | 鸥翼 | 260 | 4.7A | 30 | 80V | 47A | 增强型MOSFET | 2W | 11 ns | 900mW | 2 N-Channel (Dual) | SWITCHING | 44m Ω @ 4.7A, 10V | 4V @ 250μA | 1180pF @ 40V | 35nC @ 10V | 8ns | 12 ns | 4.7A | 2.3V | 20V | 80V | 175 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.575mm | 4.9mm | 3.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | NTHD4508NT1G | ON Semiconductor | 数据表 | 2900 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 11 hours ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | SILICON | 3A | 2 | 10 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 20V | 2.1W | C 弯管 | 260 | 3.1A | 40 | NTHD4508N | 8 | Dual | 增强型MOSFET | 1.13W | 5 ns | 2 N-Channel (Dual) | SWITCHING | 75m Ω @ 3.1A, 4.5V | 1.2V @ 250μA | 180pF @ 10V | 4nC @ 4.5V | 15ns | 15 ns | 4.1A | 1.2V | 12V | 0.075Ohm | 20V | 10A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.1mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
![]() | IRF7902TRPBF | Infineon Technologies | 数据表 | 14562 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6.4A 9.7A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | HEXFET® | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 22.6MOhm | Matte Tin (Sn) | 2W | 鸥翼 | IRF7902PBF | Dual | 增强型MOSFET | 2W | 1.4W 2W | 2 N-Channel (Dual) | SWITCHING | 22.6m Ω @ 6.4A, 10V | 2.25V @ 25μA | 580pF @ 15V | 6.9nC @ 4.5V | 9.7A | 20V | 30V | 7.3 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
FDMS7602S | ON Semiconductor | 数据表 | 2807 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 211mg | SILICON | 12A 17A | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 7.5MOhm | 2.5W | R-PDSO-N6 | 增强型MOSFET | 1W | 排水源头 | 2 N-Channel (Dual) | SWITCHING | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 1750pF @ 15V | 28nC @ 10V | 3.8ns | 3.2 ns | 17A | 1.8V | 20V | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 700μm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF7504TRPBF | Infineon Technologies | 数据表 | 2 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 1.7A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 不用于新设计 | 2 (1 Year) | 8 | 270mOhm | 逻辑电平兼容 | -20V | 1.25W | 鸥翼 | -1.7A | IRF7504PBF | Dual | 增强型MOSFET | 1.25W | 9.1 ns | 2 P-Channel (Dual) | SWITCHING | 270m Ω @ 1.2A, 4.5V | 700mV @ 250μA | 240pF @ 15V | 8.2nC @ 4.5V | 35ns | 20V | 43 ns | -1.7A | -700mV | 12V | -20V | 9.6A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 860μm | 3mm | 3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | DMG6602SVT-7 | Diodes Incorporated | 数据表 | 53242 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 3.4A 2.8A | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 6 | EAR99 | 95mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 840mW | DUAL | 鸥翼 | 260 | 40 | DMG6602 | 6 | 增强型MOSFET | 840mW | 3 ns | N and P-Channel | SWITCHING | 60m Ω @ 3.1A, 10V | 2.3V @ 250μA | 400pF @ 15V | 13nC @ 10V | 5ns | N-CHANNEL AND P-CHANNEL | 3 ns | 2.8A | 20V | 3.4A | 30V | 13A | METAL-OXIDE SEMICONDUCTOR | 150°C | Logic Level Gate, 4.5V Drive | 1mm | 2.9mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
![]() | NTHD3102CT1G | ON Semiconductor | 数据表 | 330000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | 4.535924g | SILICON | 4A 3.1A | 2 | 15.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 20V | 600mW | C 弯管 | 260 | 5.5A | 40 | NTHD3102C | 8 | Dual | 增强型MOSFET | 600mW | 7.2 ns | 1.1W | N and P-Channel | SWITCHING | 45m Ω @ 4.4A, 4.5V | 1.2V @ 250μA | 510pF @ 10V | 7.9nC @ 4.5V | 16.9ns | N-CHANNEL AND P-CHANNEL | 16.9 ns | 5.5A | 400mV | 8V | 4A | 0.045Ohm | -20V | 16A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.1mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |
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